Kinetics ofa-Si:H bulk defect anda-Si:H/c-Si interface-state reduction

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Kinetics of a-Si:H bulk defect and a-Si:H/c-Si interface-state reduction

Stefaan De Wolf,1,* Christophe Ballif,1 and Michio Kondo2 1École Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland 2National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan (Received 20 Ju...

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ژورنال

عنوان ژورنال: Physical Review B

سال: 2012

ISSN: 1098-0121,1550-235X

DOI: 10.1103/physrevb.85.113302